Charging in solitary, voltage biased tunnel junctions

被引：34

作者：

Kauppinen, JP

Pekola, JP

机构：

[1] Department of Physics, University of Jyväskylä, Jyväskylä, 40351

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.77.3889

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present experiments together with a phenomenological model on the zero bias anomaly of a single, voltage biased normal metal (Al/AlOx/Al) tunnel junction, and conclude, based on clearcut results in the high temperature regime, that this resistance peak is determined purely by the charging effect. The capacitance to be charged is, however, increased over the junction capacitance by the connecting leads within the ''horizon'' of the tunnel junction.

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页码：3889 / 3892

页数：4

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