Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

Persistent photoconductivity effects have been characterized in n-type Al0.15Ga0.85N/GaN heterostructures using both monochromatic light and room light illumination. Time constants of similar to 1 x 10(4) s have been observed, and measurements of photocurrent specta performed using various illumination geometries and techniques have shown that defect levels exist rn both the Al0.15Ga0.85N and GaN layers. Broad distributions of defect levels with excitation energies lower than the bandgap energies are found in both Al0.15Ga0.85N and GaN, and evidence is observed that these levels contribute significantly to the aforementioned persistent photoconductivity effects. The photocurrent spectra also reveal the presence of a level with an excitation energy of' 3.36 eV that contributes to the persistent photoconductivity in the heterostructure. (C) 1988 American Institute of Physics.