Study of indium tin oxide thin film for separative extended gate ISFET

被引：81

作者：

Yin, LT

Chou, JC ^{[1
]}

Chung, WY

Sun, TP

Hsiung, SK

机构：

[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan

[2] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 320, Taiwan

[3] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 70卷 / 01期

关键词：

indium tin oxide; ISFET; EGFET; pH sensitivity;

D O I：

10.1016/S0254-0584(00)00373-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the indium tin oxide (ITO) was used as a sensitive film for H+ ion sensitive field effect transistor (ISFET). The sensitive characteristics of ITO glass structure for separative extended gate ion sensitive dd effect transistors (EGFET) were studied. ITO thin film is used for the first time as a H+ ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH 2 and pH 12. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：12 / 16

页数：5

共 21 条

[1] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].