Controllable nanogap fabrication on microchip by chronopotentiometry

被引:41
作者
Liu, B
Xiang, J
Tian, JH
Zhong, C
Mao, BW
Yang, FZ
Chen, ZB
Wu, ST
Tian, ZQ [1 ]
机构
[1] Xiamen Univ, Dept Chem, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Pen Tung Sah Micro Electro Mech Syst Res Ctr, Xiamen 361005, Peoples R China
关键词
nanogap fabrication; electrodeposition; nanodevices; chronopotentiometry; electrical double layer;
D O I
10.1016/j.electacta.2004.12.041
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This work aims to solve one of the key issues for developing molecular and nanoscale devices, i.e., how to controllably fabricate nano/angstrom-size gaps on microchips. It has been shown that with a galvanostat and use of the electrode potential as the feedback, we can be used to electrochemically fabricate metallic electrode pair with controlled gap widths ranging from about ten nanometers down to few angstroms. It is based on probing the potential drop in the electrical double layer across the two electrodes during the narrowing of the gap. The process is simple and controllable, allowing rapid fabrication of nanogaps and adaptation of a commonly used electrochemical instrument. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3041 / 3047
页数:7
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