Electrochemical fabrication of atomically thin metallic wires and electrodes separated with molecular-scale gaps

被引:48
作者
He, HX
Boussaad, S
Xu, BQ
Li, CZ
Tao, NJ [1 ]
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
conductance quantization; quantum tunneling; metallic nanowire and nanogap;
D O I
10.1016/S0022-0728(02)00692-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This article Summarizes our recent effort to fabricate electrochemically metallic nanowires and electrodes separated with molecular scale nanogaps. The nanowires were fabricated by etching a small portion of a micron-scale metallic wire supported on a solid substrate. The etching was controlled by continuously monitoring the conductance of the wire. When the thinnest portion of the wire reached the atomic scale, the conductance decreased in a stepwise fashion. By further etching away the last few atoms, a molecular-scale gap between two electrodes was created and the ballistic electron transport through the nanowire was replaced with quantum tunneling. By depositing atoms back, the above processes could be reversed, allowing us to achieve a desired nanowire or gap. The nanowires may be used for chemical sensor applications and the nanogaps may be used to wire small molecules to the outside world for molecular electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:167 / 172
页数:6
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