CuInS2 thin films deposited by ALD

被引：37

作者：

Nanu, M ^{[1
]}

Reijnen, L ^{[1
]}

Meester, B ^{[1
]}

Schoonman, J ^{[1
]}

Goossens, A ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, Inorgan Chem Lab, NL-2628 BL Delft, Netherlands

来源：

CHEMICAL VAPOR DEPOSITION | 2004年 / 10卷 / 01期

关键词：

D O I：

10.1002/cvde.200306262

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

At present, chalcopyrites are widely studied as absorber materials for efficient, low-cost, thin film solar cells. The growth of CuInS2 thin films by atomic layer deposition (ALD) is studied here. CuInS2 films are grown on glass, TCO glass (SnO2:F-coated glass), and TiO2 substrates under pressures in the range 2-10 mbar, with temperatures between 350 degreesC and 500 degreesC, using CuCl, InCl3, and H2S as precursors. The influence of the process conditions on the properties of the material is examined, and the deposition temperature and the pulse length of the precursors are found to be the decisive parameters. The morphology and the composition of the films are investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), Rutherford backscattering (RBS), and Raman spectroscopy (RS). Depending on the process conditions, CuInS2 single phase, Cu-poor (mixture of CuInS2 and CuIn5S8), or Cu-rich (mixture of CuxS and CuInS2) phases are formed.

引用

页码：45 / 49

页数：5

共 17 条

[1] Polymorphism in CuInS2 epilayers:: Origin of additional Raman modes [J].

Alvarez-García, J ;

Pérez-Rodríguez, A ;

Barcones, B ;

Romano-Rodríguez, A ;

Morante, JR ;

Janotti, A ;

Wei, SH ;

Scheer, R .

APPLIED PHYSICS LETTERS, 2002, 80 (04) :562-564

[2] Simulated annealing analysis of Rutherford backscattering data [J].

Barradas, NP ;

Jeynes, C ;

Webb, RP .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :291-293

[3] Preparation of CuInS2 thin films by sequential evaporation of In2S3 and CuS [J].

Bleyhl, S ;

Saad, M ;

Diesner, K ;

Jäger-Waldau, A ;

Lux-Steiner, MC .

SOLID STATE PHENOMENA, 1999, 67-8 :367-372

[4] A torsion study on the sublimation process of InCl3 [J].

Brunetti, B ;

Piacente, V ;

Scardala, P .

JOURNAL OF CHEMICAL AND ENGINEERING DATA, 1998, 43 (01) :101-104

[5] RAMAN AND INFRARED STUDIES OF AGIN5S8 AND CUIN5S8 SINGLE-CRYSTALS [J].

GASANLY, NM ;

MAGOMEDOV, AZ ;

MELNIK, NN ;

SALAMOV, BG .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 177 (01) :K31-K35

[6] CuInS2 thin-films from co-evaporated precursors [J].

Gossla, M ;

Metzner, H ;

Mahnke, HE .

THIN SOLID FILMS, 2001, 387 (1-2) :77-79

[7] Applications of functionalized transition metal complexes in photonic and optoelectronic devices [J].

Kalyanasundaram, K ;

Grätzel, M .

COORDINATION CHEMISTRY REVIEWS, 1998, 177 :347-414

[8] Efficient CuInS2 thin-film solar cells prepared by a sequential process [J].

Klaer, J ;

Bruns, J ;

Henninger, R ;

Seimer, K ;

Klenk, R ;

Ellmer, K ;

Bräunig, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (12) :1456-1458

[9]

KLAER J, 1997, P 14 EUR PHOT SOL EN, P1307

[10]

MEESE JM, 1975, B AM PHYS SOC, V20, P696

← 1 2 →