Fabrication of large-area silicon nanowire p-n junction diode arrays

被引：213

作者：

Peng, KQ ^{[1
]}

Huang, ZP ^{[1
]}

Zhu, J ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 01期

关键词：

D O I：

10.1002/adma.200306185

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large-area silicon nanowire p-n junction diode arrays (see Figure) have been fabricated by chemical etching of planar silicon p-n junction wafers in aqueous HF solution that contains appropriate amounts of silver nitrate near room temperature. The I-V characteristics have been measured using current-sensing atomic force microscopy, and nonlinear and rectifying electrical transport behavior has been observed.

引用

页码：73 / +

页数：5

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