Nano- and microdot array formation of FeSi2 by nanosecond excimer laser-induced forward transfer

被引:41
作者
Narazaki, Aiko [1 ]
Sato, Tadatake [1 ]
Kurosaki, Ryozo [1 ]
Kawaguchi, Yoshizo [1 ]
Niino, Hiroyuki [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
关键词
D O I
10.1143/APEX.1.057001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fabrication of FeSi2 nano- and microdot array was performed by utilizing droplet ejection through nanosecond laser-induced forward transfer (ns-LIFT). An amorphous FeSi2 source film on a transparent support was illuminated from the support by a nanosecond excimer laser pulse patterned into migcrogrid form, resulting in size- and site-controlled deposition of microdot array onto a silicon substrate. Micro-Raman spectroscopy confirmed beta-FeSi2 crystalline phase even on unheated substrates. Moreover, the dot size was successfully reduced to approximately 500 nm in diameter, smaller than any previously reported by ns-LIFT. This technique is useful for integrating functional nano- and microdots under atmospheric room -temperature conditions. (c) 2008 The Japan Society of Applied Physics.
引用
收藏
页码:0570011 / 0570013
页数:3
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