An organic p-type dopant with high thermal stability for an organic semiconductor

被引：73

作者：

Gao, Zhi Qiang ^{[1
]}

Mi, Bao Xiu ^{[1
,5
]}

Xu, Gui Zhen ^{[3
]}

Wan, Yi Qian ^{[3
]}

Gong, Meng Lian ^{[3
]}

Cheah, Kok Wai ^{[1
,2
]}

Chen, Chin H. ^{[4
]}

机构：

[1] Hong Kong Baptist Univ, CALM, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong, Peoples R China

[3] Sun Yat Sen Univ, Sch Chem & Chem Engn, State Key Lab Optoelect mat & Technol, Guangzhou 510275, Peoples R China

[4] Natl Chiao Tung Univ, Display Inst, Microelect & Informat Sys Res Ctr, Hsinchu 300, Taiwan

[5] Nanjing Univ Posts & Telecommun, IAM, Nanjing 210003, Jiangsu, Peoples R China

来源：

CHEMICAL COMMUNICATIONS | 2008年 / 01期

关键词：

D O I：

10.1039/b713566a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

引用

页码：117 / 119

页数：3

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