Sulfur K-edge XAS and DFT calculations on P450 model complexes: Effects of hydrogen bonding on electronic structure and redox potentials

被引:79
作者
Dey, A
Okamura, T
Ueyama, N
Hedman, B
Hodgson, KO
Solomon, EI [1 ]
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Stanford Univ, Stanford Synchrotron Radiat Lab, SLAC, Menlo Pk, CA 94025 USA
[3] Osaka Univ, Grad Sch Sci, Dept Macromol Sci, Toyonaka, Osaka 5600043, Japan
关键词
D O I
10.1021/ja0519031
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hydrogen bonding (H-bonding) is generally thought to play an important role in tuning the electronic structure and reactivity of metal-sulfur sites in proteins. To develop a quantitative understanding of this effect, S K-edge X-ray absorption spectroscopy (XAS) has been employed to directly probe ligand-metal bond covalency, where it has been found that protein active sites are significantly less covalent than their related model complexes. Sulfur K-edge XAS data are reported here on a series of P450 model complexes with increasing H-bonding to the ligated thiolate from its substituent. The XAS spectroscopic results show a dramatic decrease in preedge intensity. DFT calculations reproduce these effects and show that the observed changes are in fact solely due to H-bonding and not from the inductive effect of the substituent on the thiolate. These calculations also indicate that the H-bonding interaction in these systems is mainly dipolar in nature. The -2.5 kcal/mol energy of the H-bonding interaction was small relative to the large change in ligand-metal bond covalency (30%) observed in the data. A bond decomposition analysis of the total energy is developed to correlate the preedge intensity change to the change in Fe-S bonding interaction on H-bonding. This effect is greater for the reduced than the oxidized state, leading to a 260 mV increase in the redox potential. A simple model shows that E should vary approximately linearly with the covalency of the Fe-S bond in the oxidized state, which can be determined directly from S K-edge XAS.
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页码:12046 / 12053
页数:8
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