Validity of the Einstein Relation in Disordered Organic Semiconductors

被引：115

作者：

Wetzelaer, G. A. H. ^{[1
,2
]}

Koster, L. J. A. ^{[1
]}

Blom, P. W. M. ^{[1
,3
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Dutch Polymer Inst, NL-5600 AX Eindhoven, Netherlands

[3] TNO, Holst Ctr, NL-5605 KN Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 06期

关键词：

OPEN-CIRCUIT VOLTAGE; HOLE-TRANSPORT; CHARGE-TRANSPORT; SOLAR-CELLS;

D O I：

10.1103/PhysRevLett.107.066605

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is controversial whether energetic disorder in semiconductors is already sufficient to violate the classical Einstein relation, even in the case of thermal equilibrium. We demonstrate that the Einstein relation is violated only under nonequilibrium conditions due to deeply trapped carriers, as in diffusion-driven current measurements on organic single-carrier diodes. Removal of these deeply trapped carriers by recombination unambiguously proves the validity of the Einstein relation in disordered semiconductors in thermal (quasi) equilibrium.

引用

页数：4

共 25 条

[1]

[Anonymous], 1940, CHEM ED, DOI DOI 10.1021/ED018P249.1

[2]

Baranovskii SD, 1996, J NON-CRYST SOLIDS, V200, P214, DOI 10.1016/0022-3093(95)00685-0

[3] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].