Organic homojunction diodes with a high built-in potential: Interpretation of the current-voltage characteristics by a generalized Einstein relation

被引:173
作者
Harada, K [1 ]
Werner, AG
Pfeiffer, M
Bloom, CJ
Elliott, CM
Leo, K
机构
[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
[2] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA
关键词
D O I
10.1103/PhysRevLett.94.036601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials.
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页数:4
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