Optically active erbium-oxygen complexes in GaAs

被引：10

作者：

Coutinho, J ^{[1
]}

Jones, R

Shaw, MJ

Briddon, PR

Öberg, S

机构：

[1] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal

[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[3] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[4] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.1668323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Density functional modeling of Er and Er-O complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture. Among the defects studied, the ErGaOAs and Er-Ga(O-As)(2) models have the symmetry and carrier trap location close to the defect responsible for the strong 1.54 mum photoluminescence band in Er, O codoped GaAs. (C) 2004 American Institute of Physics.

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页码：1683 / 1685

页数：3

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