Er-related trap levels in GaAs:Er,O studied by optical spectroscopy under hydrostatic pressure

被引：10

作者：

Hogg, RA ^{[1
]}

Takahei, K ^{[1
]}

Taguchi, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.56.10255

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An optical spectroscopic study of Er-related luminescence in GaAs:Er,O as a function of temperature and applied hydrostatic pressure is reported. We observed the appearance of different Er-related luminescence under the application of hydrostatic pressure. The temperature dependence of the luminescence intensities for three kinds of Er centers as a function of pressure is measured and discussed in terms of the trap levels formed by the Er centers. It is shown that the energy-transfer process between photoexcited carriers in the host and the 4f shell of the Er3+ ion may occur when trap levels associated with an Er center enter the band gap under the application of hydrostatic pressure. [S0163-1829(97)06840-9].

引用

页码：10255 / 10263

页数：9

共 28 条

[1]

ADACHI S, 1992, PHYSICAL PROPERTIES

[2] TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY FROM ERBIUM-DOPED GA0.55AL0.45AS [J].

BENYATTOU, T ;

SEGHIER, D ;

GUILLOT, G ;

MONCORGE, R ;

GALTIER, P ;

CHARASSE, MN .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2132-2134

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[5] PRESSURE COEFFICIENTS OF BAND-GAPS IN SEMICONDUCTORS [J].

CHANG, KJ ;

FROYEN, S ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1984, 50 (02) :105-107

[6] Excitation properties of Er-doped GaP from photoluminescence and high pressure studies [J].

Culp, TD ;

Wang, XZ ;

Kuech, TF ;

Wessels, BW ;

Bray, KL .

RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 :279-284

[7] MINIATURE CRYOGENIC DIAMOND-ANVIL HIGH-PRESSURE-CELL [J].

DUNSTAN, DJ ;

SCHERRER, W .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (04) :627-630

[8]

ENNEN H, 1987, J APPL PHYS, V61, P487

[9] RADIATIVE AND NONRADIATIVE-TRANSITIONS IN GAAS-ER [J].

FANG, XM ;

LI, YB ;

LANGER, DW .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6990-6992

[10] Configurational transformation of an Er center in GaAs:Er,O under hydrostatic pressure [J].

Hogg, RA ;

Takahei, K ;

Taguchi, A ;

Takarabe, K ;

Mizushima, T ;

Minomura, S .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :813-816

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