Atomic layer epitaxy of copper -: Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H2 process

被引:120
作者
Martensson, P [1 ]
Carlsson, JO [1 ]
机构
[1] Angstrom Lab, Dept Inorgan Chem, S-75121 Uppsala, Sweden
关键词
D O I
10.1149/1.1838738
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatures below 200 degrees C. This is more than 150 degrees C lower than in previous reports for the same precursor where chemical vapor deposition has been employed. The process was self-limited in the temperature range 190 to 260 degrees C. Area-selective deposition was achieved on platinum seeded substrates vs. unseeded. glass slides or oxidized metal surfaces in the temperature range 175 to 300 degrees C. At higher temperatures, the selectivity was lost, and nucleation was independent of substrate material because of a thermal decomposition of the precursor.
引用
收藏
页码:2926 / 2931
页数:6
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