Depletion-type thin-film transistors with a ferroelectric insulator

被引：79

作者：

Prins, MWJ ^{[1
]}

Zinnemers, SE ^{[1
]}

Cillessen, JFM ^{[1
]}

Giesbers, JB ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,NL-5600 MB EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7 x 10(3). Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors. (C) 1997 American Institute of Physics.

引用

页码：458 / 460

页数：3

共 15 条

[1] FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES
AHN, CH
TRISCONE, JM
ARCHIBALD, N
DECROUX, M
HAMMOND, RH
GEBALLE, TH
FISCHER, O
BEASLEY, MR
[J]. SCIENCE, 1995, 269 (5222) : 373 - 376
[2] CERAMIC FERROELECTRIC FIELD EFFECT STUDIES
CRAWFORD, JC
ENGLISH, FL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (06) : 525 - &
[3] DONG ZW, IN PRESS
[4] GrosseHolz KO, 1996, MATER RES SOC SYMP P, V401, P67
[5] TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3/YBA2CU3O7-X 3-TERMINAL DEVICE
LIN, H
WU, NJ
XIE, K
LI, XY
IGNATIEV, A
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (08) : 953 - 955
[6] FERROELECTRIC MEMORY FET WITH IR/IRO2 ELECTRODES
NAKAMURA, T
NAKAO, Y
KAMISAWA, A
TAKASU, H
[J]. INTEGRATED FERROELECTRICS, 1995, 9 (1-3) : 179 - 187
[7] STUDY ON FERROELECTRIC THIN-FILMS FOR APPLICATION TO NDRO NONVOLATILE MEMORIES
NAKAO, Y
NAKAMURA, T
KAMISAWA, A
TAKASU, H
[J]. INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 23 - 34
[8] A ferroelectric transparent thin-film transistor
Prins, MWJ
GrosseHolz, KO
Muller, G
Cillessen, JFM
Giesbers, JB
Weening, RP
Wolf, RM
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (25) : 3650 - 3652
[9] MECHANISMS FOR THE OPERATION OF THIN-FILM TRANSISTORS ON FERROELECTRICS
SEAGER, CH
MCINTYRE, D
TUTTLE, BA
EVANS, J
[J]. INTEGRATED FERROELECTRICS, 1995, 6 (1-4) : 47 - 68
[10] Seager CH, 1996, APPL PHYS LETT, V68, P2660, DOI 10.1063/1.116273

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