Voltage-tuning in multi-color quantum well infrared photodetector stacks

被引：25

作者：

Lenchyshyn, LC

Liu, HC

Buchanan, M

Wasilewski, ZR

机构：

[1] Inst. for Microstructural Sciences, National Research Council, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.362365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of stacked quantum well infrared photodetectors is undertaken to improve the understanding of the voltage-tunable multi-color spectral response. The multi-color capability is achieved by sequentially growing conventional one color detectors, separated by conducting layers. The behavior of the stacked devices is proven to correspond to the individual detectors simply acting in series with each other. The de resistance, photocurrent and dynamic resistance characteristics of the individual detectors are examined and correlated with the voltage-tuning in the stack. (C) 1996 American Institute of Physics.

引用

页码：8091 / 8097

页数：7

共 20 条

[1]

BROWN ER, 1994, QUANTUM WELL INTERSU

[2] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].