DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS

被引：70

作者：

LIU, HC

STEELE, AG

BUCHANAN, M

WASILEWSKI, ZR

机构：

[1] Institute for Microstructural Sciences, National Research Council, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.353146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modeling the dark current in quantum well infrared photodetectors has been a topic of much recent research, but the implications of many of the underlying assumptions have not been clarified. We attempt to justify one such model and to provide physical insight for its success. We compare the dark current expression with experiments on several samples, and show that the model provides a good approximation for a wide range of device parameters including barrier thicknesses from 250 to 700 angstrom and number of wells from 4 to 32.

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页码：2029 / 2031

页数：3

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