Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 barriers formed by rf sputter etching in Ar/O2 plasma

被引：36

作者：

Nassar, J ^{[1
]}

Hehn, M ^{[1
]}

Vaures, A ^{[1
]}

Petroff, F ^{[1
]}

Fert, A ^{[1
]}

机构：

[1] Thomson CSF, LCR, CNRS, Unite Mixte Rech, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Co/Al2O3/Ni80Fe20 tunnel junctions were grown by sputtering at room temperature on glass and Si substrates, the barrier being formed by rf sputter etching of aluminum in a Ar/O-2 plasma. The resistance is controlled for a given junction area by adjusting the oxide barrier thickness. Magnetoresistance ratios of 16% at 4.2 K and 6% at room temperature are obtained with good reproducibility over three orders of magnitude of resistance. Effects related to substrate shunting and oxidation of the bottom Co electrode are discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)04031-5].

引用

页码：698 / 700

页数：3

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