Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition

被引：109

作者：

Gao, Chao ^{[1
]}

Shen, Honglie ^{[1
]}

Sun, Lei ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 15期

关键词：

SnS; Chemical bath deposition; Crystal structure; Optical and electrical properties; SULFIDE THIN-FILMS;

D O I：

10.1016/j.apsusc.2011.02.116

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SnS (stannous sulfide) films were prepared by chemical bath deposition in which a novel chelating reagent ammonium citrate was used. The film has a zinc blende structure or an orthorhombic structure which is determined by the pH value and the temperature of the deposition solution. The reason for this result is considered to be that SnS films prepared under different conditions have different deposition mechanisms (ion-by-ion mechanism for the zinc blende structured SnS and hydroxide cluster mechanism for the orthorhombic structured SnS). The prepared SnS films are homogeneous and well adhered. SEM images show that the SnS films with different structures have different surface morphologies. Electrical test shows that the resistivity of the films is as low as 420 Omega cm and 3300 Omega cm for orthorhombic and zinc blende SnS films, respectively, which are much lower than the ever reported values. Persistent photoconductivity (PPC) phenomena are observed for both the films with zinc blende and orthorhombic structures by photo-current responses measurement. The optical bandgaps of the SnS films are determined to be 1.75 eV and 1.15 eV for zinc blende structure and orthorhombic structure, respectively. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：6750 / 6755

页数：6

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