Theory of current-driven domain wall motion: Spin transfer versus momentum transfer

被引:783
作者
Tatara, G [1 ]
Kohno, H
机构
[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
关键词
D O I
10.1103/PhysRevLett.92.086601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current has two effects: one is momentum transfer, which is proportional to the charge current and wall resistivity (rho(w)); the other is spin transfer, proportional to spin current. For thick walls, as in metallic wires, the latter dominates and the threshold current for wall motion is determined by the hard-axis magnetic anisotropy, except for the case of very strong pinning. For thin walls, as in nanocontacts and magnetic semiconductors, the momentum-transfer effect dominates, and the threshold current is proportional to V-0/rho(w), V-0 being the pinning potential.
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页数:4
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