Microcrystalline p-i-n cells: a drift-controlled device?

被引:6
作者
Wyrsch, N [1 ]
Torres, P [1 ]
Meier, J [1 ]
Shah, A [1 ]
机构
[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland
关键词
mu c-Si : H; solar cells; transport properties;
D O I
10.1016/S0022-3093(98)00303-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The objective of this paper is to get more insight into the physics of microcrystalline silicon based solar cell by studying electric field profiles, spectral responses and current-voltage characteristics. Based on a comparison with a-Si:H p-i-n and c-Si p-n diodes, we concluded that mu c-Si:H p-i-n devices are not field-controlled despite the presence of a high electric field in the i-layer. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1272 / 1276
页数:5
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