The effects of nitrogenation on the electrochemical properties of nanocrystalline diamond films

被引：6

作者：

Pleskov, Yu. V. ^{[1
]}

Krotova, M. D. ^{[1
]}

Saveliev, A. V. ^{[2
]}

Ralchenko, V. G. ^{[2
]}

机构：

[1] Frumkin Inst Phys Chem & Electrochem, Moscow 119991, Russia

[2] Moscow Gen Phys Inst, Moscow 119991, Russia

来源：

基金：

俄罗斯基础研究基金会;

关键词：

diamond film; nanocrystalline; electrodes; electrochemical;

D O I：

10.1016/j.diamond.2007.05.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the nitrogenation on the electrochemical properties of nanocrystalline diamond films produced by microwave plasma CVD in CH4-Ar-H-2-N-2 gas mixtures was studied systematically, using cyclic voltammetry and electrochemical impedance spectroscopy measurements, for the first time. Differential capacitance, kinetic parameters of reactions in [Fe(CN)6](3-/4)-redox system and potential window were found to be sensitive to the nitrogen concentration in the process gas. With its increase (from 0 to 25%), a transition of the NCD film behavior from "poor conductor" to metal-like character takes place. The heavily N-doped nanocrystalline diamond films have satisfactory electrochemical properties to be used as electrodes. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：2114 / 2117

页数：4

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