CMOS/nano co-design for crossbar-based molecular electronic systems

被引:109
作者
Ziegler, MM [1 ]
Stan, MR [1 ]
机构
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
关键词
crossbar architectures; molecular electronics; nanocircults; nanoelectronics; nanotechnology; very large scale integration (VLSI);
D O I
10.1109/TNANO.2003.820804
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Future electronic systems will need to adopt novel nanoelectronic solutions to keep pace with Moore's Law. Crossbar-based molecular electronics are among the most promising of nanotechnologies. However, circuits similar to the conventional mainstream electronics of today will have a presence in future complex systems for some time. This paper presents a circuit paradigm where silicon and molecular electronics are integrated. We discuss methods for realizing memory and logic using nanoscale crossbars as well as for interfacing the crossbars to CMOS circuitry. Using custom nanoscale device models, we perform circuit simulation and analysis of the crossbar circuits and the peripheral CMOS circuitry. Finally, we present a design methodology to accompany the CMOS/nano paradigm.
引用
收藏
页码:217 / 230
页数:14
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