Electrical noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctions

被引：110

作者：

Nowak, ER ^{[1
]}

Weissman, MB

Parkin, SSP

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency noise has been measured in magnetic tunnel junctions that have Al2O3 tunnel barriers and magnetoresistance values up to 35% at 295 K. Fluctuations in voltage were found to cross over from Johnson noise to shot noise at low bias voltages, in quantitative agreement with theories of noise in quantum ballistic systems. 1/f resistance noise, where f is frequency, predominates at larger biases and is proportional to the mean current squared. This noise is attributed to trapping processes and it depends sensitively on the relative position of the oxide edge and the ferromagnet-Al interface. (C) 1999 American Institute of Physics. [S0003-6951(99)03304-5].

引用

页码：600 / 602

页数：3

共 15 条

[1] TUNNELING CONDUCTANCE OF ASYMMETRICAL BARRIERS [J].