NOISE IN THIN FILMS METAL-OXIDE-METAL AL-AL203-AL

被引：11

作者：

LECOY, G

GOUSKOV, L

机构：

[1] Centre d'Etudes d'Electronique des Solides, C.N.R.S., Faculté des Sciences de Montpellier

来源：

PHYSICA STATUS SOLIDI | 1968年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssb.19680300102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is the purpose of this note to verify the existence of tunneling through the oxide layer of metal‐oxide‐metal structures. Noise measurements on thin AlAl2O3Al sandwiches (30 Å thick) yield full shot noise at high frequencies (v > 1000 Hz) and v−3/2 noise for v < 1000 Hz. From conductivity and noise measurements the dependence of each individual tunnel current on voltage and temperature is determined. Experimental values of I1/I2 are in good agreement with the Boltzmann law owing to the tunneling process. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：9 / &

共 10 条

[1] TUNNELING THROUGH THIN INSULATING LAYERS [J].