Mn 3d partial density of states in Ga1-xMnxAs studied by resonant photoemission spectroscopy

被引：118

作者：

Okabayashi, J ^{[1
]}

Kimura, A

Mizokawa, T

Fujimori, A

Hayashi, T

Tanaka, M

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Inst Solid State Phys, Synchrotron Radiat Lab, Minato Ku, Tokyo 1068666, Japan

[3] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.59.R2486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission technique as well as by means of the difference between Ga1-xMnxAs and GaAs. We have observed a strong satellite structure on the higher binding energy side of the main peak, as in Mn-doped II-VI compounds such as Cd1-xMnxTe. Based on analysis using configuration-interaction calculation for a MnAs4 cluster, we could ascribe the spectral features to strong Mn 3d-As 4p hybridization and Mn 3d-3d Coulomb interaction. [S0163-1829(99)50904-1].

引用

页码：R2486 / R2489

页数：4

共 20 条

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