Determination of elastic modulus and Poisson's ratio of diamond-like carbon films

被引:90
作者
Cho, SJ
Lee, KR
Eun, KY
Hahn, JH
Ko, DH
机构
[1] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul 120701, South Korea
[3] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea
关键词
diamond-like carbon; elastic modulus; Poisson's ratio; PACVD;
D O I
10.1016/S0040-6090(98)01512-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple technique to measure the elastic modulus and Poisson's ratio of diamond-like carbon (DLC) films deposited on Si substrate was suggested. This technique involved etching a side of Si substrate using the DLC film as an etching mash. The edge of the DLC overhang, which is free from constraint of the Si substrate, exhibits periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinusoidal edge, we can determine the strain of the film required to adhere to the substrate. Combined with an independent stress measurement by laser reflection method this technique allows calculation of the biaxial elastic modulus, E/(1 - nu) where E is the elastic modulus and nu Poisson's ratio of the DLC films. By comparing the biaxial elastic modulus with plane-strain modulus E/(1 - nu(2)) measured by nanoindentation, we could further determine the elastic modulus and Poisson's ratio, independently. The mechanical propel ties of DLC films deposited by r.f. PACVD were characterized using this technique. The films were prepared by using C6H6 r.f. glow discharge at a self bias voltage of 400 V and a deposition pressure of 1.33 Pa. The elastic modulus and Poisson's ratio were 87 +/- 18 GPa and 0.22 +/- 0.33. respectively. The effects of the etching depth and the film thickness were also discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:207 / 210
页数:4
相关论文
共 15 条
[1]  
BERRY BS, 1990, APPL PHYS LETT, V57, P32
[2]   A SIMPLE TECHNIQUE FOR DETERMINING THE STRESS AT THE SI-SIO2 INTERFACE [J].
BORDEN, PG .
APPLIED PHYSICS LETTERS, 1980, 36 (10) :829-831
[3]   HARDNESS AND YOUNGS MODULUS OF AMORPHOUS A-SIC THIN-FILMS DETERMINED BY NANOINDENTATION AND BULGE TESTS [J].
ELKHAKANI, MA ;
CHAKER, M ;
JEAN, A ;
BOILY, S ;
KIEFFER, JC ;
OHERN, ME ;
RAVET, MF ;
ROUSSEAUX, F .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (01) :96-103
[4]  
FUJIMORI N, 1989, NEW DIAMOND, V3, P20
[5]   STRESS IN POLYCRYSTALLINE AND AMORPHOUS-SILICON THIN-FILMS [J].
HOWE, RT ;
MULLER, RS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4674-4675
[6]  
Imai T., 1990, U.S. Patent, Patent No. [4,952,832, 4952832]
[7]   MECHANICAL-PROPERTIES OF A-C-H FILMS PREPARED BY PLASMA DECOMPOSITION OF C2H2 [J].
JIANG, X ;
REICHELT, K ;
STRITZKER, B .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1018-1022
[8]  
Lee K.-R., 1993, B KOREAN I MET MAT, V6, P345
[9]  
LEE KR, 1993, MATER RES SOC SYMP P, V308, P101, DOI 10.1557/PROC-308-101
[10]  
LEE KR, 1998, IN PRESS THIN SOLID