Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios

被引：5

作者：

Zhang, WG ^{[1
]}

Hüttinger, KJ ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Tech Chem, D-76128 Karlsruhe, Germany

来源：

JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期

关键词：

D O I：

10.1051/jp4:2001307

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Chemical vapor deposition of SiC from methyltrichlorosilane and hydrogen was studied as a function of temperature using substrates with different surface area / volume ratios, Deposition rates and composition of the deposits at various temperatures and surface area / volume ratios were determined as a function of reactor or substrate length, respectively. The gas phase composition was analyzed as a function of residence time. Si is deposited in high excess at low temperatures and especially low surface area / volume ratios. The unusual temperature dependence of the overall deposition rate with rate maxima at about 900 and 1025 degreesC is caused by temperature selective depositions of both, SiC and Si. Deposition of stoichiometric SiC and a continuous increase of the deposition rate are obtained at a high surface area / volume ratio. Ile results are discussed on the basis of a novel chemical model.

引用

页码：55 / 62

页数：8

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