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Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs

被引：31
作者：
Fernandez, M
Prete, P
Lovergine, N
Mancini, AM
Cingolani, R
Vasanelli, L
Perrone, MR
机构：
[1] CNR,IME,I-73100 LECCE,ITALY
[2] UNIV LECCE,DIPARTIMENTO FIS,I-73100 LECCE,ITALY
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.55.7660
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates.
引用
收藏
页码：7660 / 7666
页数：7
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