Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs

被引：31

作者：

Fernandez, M

Prete, P

Lovergine, N

Mancini, AM

Cingolani, R

Vasanelli, L

Perrone, MR

机构：

[1] CNR,IME,I-73100 LECCE,ITALY

[2] UNIV LECCE,DIPARTIMENTO FIS,I-73100 LECCE,ITALY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.55.7660

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates.

引用

页码：7660 / 7666

页数：7

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