InAs quantum dot formation on GaAs pyramids by selective area MOVPE

被引：29

作者：

Umeda, T ^{[1
]}

Kumakura, K ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

关键词：

selective area MOVPE; quantum dot; InAs;

D O I：

10.1016/S1386-9477(98)00146-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate InAs growth on the top of GaAs pyramidal structures formed by selective area MOVPE; and show a successful achievement of the position controlled self-organized InAs quantum dots. First, GaAs pyramidal structures are selectively grown on GaAs (001)substrates with SiNx masks which have circular opening patterns in 150 nm diameter, and in 160-500 nm periodicity. Next, InAs layer is grown on GaAs pyramids. In this case, InAs dots are preferentially formed on the top portion of the pyramids. Finally, GaAs capping layer is overgrown on InAs dots. Photoluminescence (PL) spectrum shows strong emission from InAs quantum dots formed on the top portions of the pyramids. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：714 / 719

页数：6

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