Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

被引：56

作者：

Nelson, JS

Schultz, PA

Wright, AF

机构：

[1] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA

[2] Sandia Natl Labs, Parallel Computat Mat Sci Dept, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion, First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy), (C) 1998 American Institute of Physics. [S0003-6951 (98)04128-X].

引用

页码：247 / 249

页数：3

共 29 条

[1]

BUNEA MM, UNPUB

[2] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].