MONOVACANCY FORMATION ENTHALPY IN SILICON

被引：223

作者：

DANNEFAER, S

MASCHER, P

KERR, D

机构：

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.56.2195

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2195 / 2198

页数：4

共 17 条

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