MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON

被引：119

作者：

CAR, R ^{[1
]}

KELLY, PJ ^{[1
]}

OSHIYAMA, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1103/PhysRevLett.54.360

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：360 / 363

页数：4

共 17 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS
ANTONIADIS, DA
MOSKOWITZ, I
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6788 - 6796
[2] MIGRATION OF INTERSTITIALS IN SILICON
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3460 - 3469
[3] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2216 - 2218
[4] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1129 - 1132
[5] BARYAM Y, UNPUB J ELECTRON MAT
[6] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON
CAR, R
KELLY, PJ
OSHIYAMA, A
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817
[7] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON
CHANTRE, A
KECHOUANE, M
BOIS, D
[J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552
[8] FAIR RB, 1981, J APPL PHYS, V51, P5828
[9] FRANK W, UNPUB DIFFUSION SOLI
[10] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217