ON MECHANISM OF SUBSTITUTIONAL DIFFUSION IN SILICON

[1] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[2] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[3] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[4] DAVOUSTSALTIEL E, 1958, PHYS REV, V110, P275

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[6] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[7] HASIGUTI RR, 1958, PHYS REV, V110, P259

[8] Langmuir, 1922, PHYS REV, V20, P113

[9] DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &

[10] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (11) : 280 - +

[1] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[2] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[3] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &

[4] DAVOUSTSALTIEL E, 1958, PHYS REV, V110, P275

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[6] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[7] HASIGUTI RR, 1958, PHYS REV, V110, P259

[8] Langmuir, 1922, PHYS REV, V20, P113

[9] DIFFUSION OF PHOSPHORUS INTO SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &

[10] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (11) : 280 - +