Growth and characterization of ZnO thin films grown by pulsed laser deposition

被引：43

作者：

Bae, SH

Lee, SY

Jin, BJ

Im, S

机构：

[1] Yonsei Univ, Dept Elect & Comp Engn, Seodaemoon Ku, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Met Engn, Seodaemoon Ku, Seoul 120749, South Korea

[3] Yonsei Univ, Dept Phys, Seodaemoon Ku, Seoul 120749, South Korea

来源：

APPLIED SURFACE SCIENCE | 2001年 / 169卷

基金：

新加坡国家研究基金会;

关键词：

ZnO; PLD; XRD; UV emission; PL; hall measurement;

D O I：

10.1016/S0169-4332(00)00752-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films on (0 0 1) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of 200-700 degreesC. According to XRD, (0 0 2) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly dependent upon the stoichiometry of ZnO films, rather than the crystalline quality. (C) 2001 Elsevier Science B.V. All rights reserved,

引用

页码：525 / 528

页数：4

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