Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN

被引：222

作者：

Cui, XY ^{[1
]}

Medvedeva, JE

Delley, B

Freeman, AJ

Newman, N

Stampfl, C

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[3] Paul Scherrer Inst, WHGA 123, CH-5232 Villigen, Switzerland

[4] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.95.256404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of extensive density-functional studies provide direct evidence that Cr atoms in CrGaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06-1.47 mu(B)/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.

引用

页数：4

共 35 条

[1] Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].