Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study

被引：6

作者：

Essenio, D ^{[1
]}

Bude, JD ^{[1
]}

Selmi, L ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the generation of interface states (N-it) and Stress Induced Leakage Current (SILC) in the stress regime of Channel Hot Electrons (CHE) and the possible beneficial effect of deuterium annealing, Our results show that no isotope effect is observed on SILC even when a large isotope effect is simultaneously observed on Nit. The generation of SILC seems to be always correlated to Hot Holes Injection (HHI) whereas two different generation mechanisms for N-it can be identified.

引用

收藏

页码：339 / 342

页数：4

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