Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

被引：11

作者：

Yi, KW ^{[1
]}

Kakimoto, K ^{[1
]}

Niu, ZG ^{[1
]}

Eguchi, M ^{[1
]}

Noguchi, H ^{[1
]}

Nakamura, S ^{[1
]}

Mukai, K ^{[1
]}

机构：

[1] KYUSHU INST TECHNOL,DEPT MAT SCI & ENGN,TOBATA KU,KITAKYUSHU,FUKUOKA 804,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 02期

关键词：

D O I：

10.1149/1.1836508

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

引用

页码：722 / 725

页数：4

共 15 条

[1] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[2]

COOK JA, 1993, JUN SAE C DETR

[3] THE GETTERING OF TRANSITION-METALS BY OXYGEN-RELATED DEFECTS IN SILICON [J].

FALSTER, R ;

BERGHOLZ, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) :1548-1559

[4] 3-DIMENSIONAL NUMERICAL-ANALYSES OF THE EFFECTS OF A CUSP MAGNETIC-FIELD ON THE FLOWS, OXYGEN-TRANSPORT AND HEAT-TRANSFER IN A CZOCHRALSKI SILICON MELT [J].

HIRATA, H ;

HOSHIKAWA, K .

JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) :181-207

[5] OXYGEN SOLUBILITY AND ITS TEMPERATURE-DEPENDENCE IN A SILICON MELT IN EQUILIBRIUM WITH SOLID SILICA [J].

HIRATA, H ;

HOSHIKAWA, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) :657-664

[6] OXYGEN SOLUBILITIES IN SI MELT - INFLUENCE OF SB ADDITION [J].

HUANG, XM ;

TERASHIMA, K ;

SASAKI, H ;

TOKIZAKI, E ;

KIMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3671-3674

[7] FLOW INSTABILITY OF MOLTEN SILICON IN THE CZOCHRALSKI CONFIGURATION [J].

KAKIMOTO, K ;

EGUCHI, M ;

WATANABE, H ;

HIBIYA, T .

JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) :16-20

[8] OXYGEN SOLUBILITY IN LIQUID SILICON [J].

NARUSHIMA, T ;

MATSUZAWA, K ;

MUKAI, Y ;

IGUCHI, Y .

MATERIALS TRANSACTIONS JIM, 1994, 35 (08) :522-528

[9] OXYGEN-TRANSPORT IN MAGNETIC CZOCHRALSKI GROWTH OF SILICON [J].

ORGAN, AE ;

RILEY, N .

JOURNAL OF CRYSTAL GROWTH, 1987, 82 (03) :465-476

[10] THERMODYNAMIC STUDY OF OXYGEN IN LIQUID ELEMENTS OF GROUP-IB TO GROUP-VIB [J].

OTSUKA, S ;

KOZUKA, Z .

TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1981, 22 (08) :558-566

← 1 2 →