OXYGEN-TRANSPORT IN MAGNETIC CZOCHRALSKI GROWTH OF SILICON

被引：52

作者：

ORGAN, AE

RILEY, N

机构：

[1] Univ of East Anglia, Norwich, Engl, Univ of East Anglia, Norwich, Engl

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 03期

关键词：

SEMICONDUCTING SILICON - Magnetic Field Effects;

D O I：

10.1016/0022-0248(87)90339-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of a uniform magnetic field on the uptake of oxygen by the crystal from the melt in Czochralski growth of silicon is investigated. A reduction is forecast in the amount of oxygen assimilated by the crystal when a magnetic field is applied.

引用

页码：465 / 476

页数：12

共 9 条

[1] BARRACLOUGH KG, 1984, COMMUNICATION
[2] DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE
CARLBERG, T
KING, TB
WITT, AF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 189 - 193
[3] DENNIS SCR, 1978, 1ST P INT C NUM METH, P69
[4] HARADA H, 1985, VLSI SCI TECHNOLOGY, P526
[5] HURLE DTJ, 1983, COMMUNICATION
[6] LANGLOIS WE, 1985, ANNU REV FLUID MECH, V17, P191
[7] LEE KJ, 1984, PHYSICOCHEM HYDRODYN, V5, P135
[8] FLOW PATTERNS IN A MAGNETIC CZOCHRALSKI CRYSTAL-GROWTH SYSTEM
ORGAN, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 571 - 582
[9] ORGAN AE, 1986, THESIS U E ANGLIA

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