DYNAMIC OXYGEN EQUILIBRIUM IN SILICON MELTS DURING CRYSTAL-GROWTH BY THE CZOCHRALSKI TECHNIQUE

被引：59

作者：

CARLBERG, T ^{[1
]}

KING, TB ^{[1
]}

WITT, AF ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 01期

关键词：

D O I：

10.1149/1.2123753

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：189 / 193

页数：5

相关论文

共 26 条

[1] [Anonymous], COMMUNICATION
[2] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON
BAKER, JA
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &
[3] EFFECT OF CARBON ON THE DISSOLUTION OF FUSED-SILICA IN LIQUID SILICON
BATHEY, B
BATES, HE
CRETELLA, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 771 - 772
[4] DISSOLUTION OF FUSED SILICA IN MOLTEN SILICON
CHANEY, RE
VARKER, CJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) : 188 - 190
[5] EQUILIBRIUM OF CARBON AND OXYGEN IN SILICON WITH CARBON-MONOXIDE IN AMBIENT ATMOSPHERE
ENDO, Y
YATSURUGI, Y
TERAI, Y
NOZAKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1422 - 1425
[6] LOW OXYGEN-CONTENT CZOCHRALSKI SILICON CRYSTAL-GROWTH
HOSHIKAWA, K
KOHDA, H
HIRATA, H
NAKANISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L33 - L36
[7] HURLE JDT, 1966, P ICCG, P659
[8] INHOMOGENEOUS OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN CZOCHRALSKI SILICON
INOUE, N
OOSAKA, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2051 - 2052
[9] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT
KAISER, W
BRESLIN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294
[10] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
KAISER, W
KECK, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887