Quantum-size effects on the pressure-induced direct-to-indirect band-gap transition in InP quantum dots

被引:39
作者
Fu, HX [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevLett.80.5397
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We predict that the difference in quantum confinement energies of Gamma-like and X-like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the "anticrossing gap" could thus be used to obtain unique information on the Gamma-X-L intervalley coupling, predicted here to be surprisingly large (50-100 meV).
引用
收藏
页码:5397 / 5400
页数:4
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共 22 条
[1]   Influence of quantum confinement on the critical points of the band structure of Si [J].
BenChorin, M ;
Averboukh, B ;
Kovalev, D ;
Polisski, G ;
Koch, F .
PHYSICAL REVIEW LETTERS, 1996, 77 (04) :763-766
[2]   DEFORMATION POTENTIALS OF THE FUNDAMENTAL EXCITON SPECTRUM OF INP [J].
CAMASSEL, J ;
MERLE, P ;
BAYO, L ;
MATHIEU, H .
PHYSICAL REVIEW B, 1980, 22 (04) :2020-2024
[3]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[4]   LOW-TEMPERATURE THERMAL-EXPANSION OF INP [J].
DEUS, P ;
SCHNEIDER, HA ;
VOLAND, U ;
STIEHLER, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 103 (02) :443-447
[5]   Plasmon Raman scattering and photoluminescence of heavily doped n-type InP near the Gamma-X crossover [J].
Ernst, S ;
Goni, AR ;
Syassen, K ;
Cardona, M .
PHYSICAL REVIEW B, 1996, 53 (03) :1287-1293
[6]   Free-standing versus AlAs-embedded GaAs quantum dots, wires, and films: The emergence of a zero-confinement state [J].
Franceschetti, A ;
Zunger, A .
APPLIED PHYSICS LETTERS, 1996, 68 (24) :3455-3457
[7]   Local-density-derived semiempirical nonlocal pseudopotentials for InP with applications to large quantum dots [J].
Fu, HX ;
Zunger, A .
PHYSICAL REVIEW B, 1997, 55 (03) :1642-1653
[8]   InP quantum dots: Electronic structure, surface effects, and the redshifted emission [J].
Fu, HX ;
Zunger, A .
PHYSICAL REVIEW B, 1997, 56 (03) :1496-1508
[9]   STATE MIXING IN INAS/GAAS QUANTUM DOTS AT THE PRESSURE-INDUCED GAMMA-X CROSSING [J].
LI, GH ;
GONI, AR ;
SYASSEN, K ;
BRANDT, O ;
PLOOG, K .
PHYSICAL REVIEW B, 1994, 50 (24) :18420-18425
[10]   EQUATION OF STATE OF INP TO 19 GPA [J].
MENONI, CS ;
SPAIN, IL .
PHYSICAL REVIEW B, 1987, 35 (14) :7520-7525