Growth and characterization of p-type AgInS2 crystals

被引：59

作者：

Yoshino, K

Komaki, H

Kakeno, T

Akaki, Y

Ikari, T

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Miyakonojo Natl Coll Technol, Dept Elect Engn, Miyazaki 8858567, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2003年 / 64卷 / 9-10期

关键词：

D O I：

10.1016/S0022-3697(03)00097-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

AgInS2 crystals have been grown at below melting point by using a Hot-Press method. The samples grown at 400 similar to 600 degreesC under 10 MPa pressure were found to contain AgIn5S8. Occurrence of this phase decreased with increasing growth temperatures and at 700 degreesC a sample containing only the AgInS2 phase was successfully obtained. Furthermore, the elemental compositions were found to become increasingly stoichiometric with increasing temperature. We also found that conduction type could be changed from n to p-type by Sb-doping, perhaps as a result of the substitution defect of Sb atoms on the S site. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1839 / 1842

页数：4

共 7 条

[1]

Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO

[2]

2-G

[3] Growth of CuInS2 crystals by a hot-press method [J].

Komaki, H ;

Yoshino, K ;

Sato, S ;

Yoneta, M ;

Akaki, Y ;

Ikari, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :253-256

[4] PREPARATION AND PROPERTIES OF AGINS2 AND AGINSE2 SINGLE-CRYSTALS AND OF THE QUATERNARY ALLOYS AGINSE2(1-X)S2X [J].

MARTINEZ, L ;

LOPEZRIVERA, SA ;

SAGREDO, V .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (06) :1687-1694

[5] ENERGY-BANDS OF AGINS2 IN CHALCOPYRITE AND ORTHORHOMBIC STRUCTURES [J].