Growth of CuInS2 crystals by a hot-press method

CuInS2 crystals were successfully grown by a hot-press method at 700degreesC for I h under high pressure (10-100 MPa). The size of each sample was 20 mm in diameter. All samples were shown to have chalcopyrite structures and were nearly stoichiometry and n-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. However, the sample grown at 400degreesC also had a different phase (CuIn11S17). The sample did not change phase with increasing temperature. CuInS2 crystals could be obtained at 700degreesC. The samples had both donor- and acceptor-type impurities since donor-acceptor pair band emission was clearly observed in the photoluminescence spectra at 10 K. (C) 2002 Elsevier Science B.V. All rights reserved.