Crystal growth and photoluminescence of CuInXGa1-XSe2 alloys

被引：21

作者：

Yoshino, K ^{[1
]}

Yokoyama, H ^{[1
]}

Maeda, K ^{[1
]}

Ikari, T ^{[1
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期

关键词：

solar cell; chalcopyrite semiconductor; CuInXGa1-XSe2 (CIGS); photoluminescence (PL);

D O I：

10.1016/S0022-0248(99)00784-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CuInxGa1-xSe2 (CIGS) alloys which can be used in photovoltaic applications have been prepared by a normal freezing (NF) method. The crystal structure, composition and conductivity types in the obtained CIGS crystals have been examined by X-ray diffraction (XRD), electron probe microanalysis (EPMA) and thermoprobe analysis, respectively. All samples are of the chalcopyrite structures, nearly stoichiometric and p-type. The grown CuInSe2, (CIS) sample is of high quality since the free-exciton emission line is clearly observed in photoluminescence (PL). The CIGS samples turn our to have many acceptor-type defects because the free-to-acceptor emission bands show considerable intensities in the PL spectra. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：476 / 479

页数：4

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