PROPERTIES OF CUIN1-XGAXSE2

Polycrystalline bulk samples of CuIn1-xGaxSe were grown with nominal x = 0.15, 0.25 and 0.5. Mobility, conductivity and band gap were measured at room and low temperatures. Mobilities for x = 0.21 were several hundred cm2 V-1 s-1 at room temperature and for x = 0. 15 Were approximately 10(3) cm2 V-1 s-1, all n type. The band gaps were estimated from the spectra of photoelectrochemical cells at room temperature (with 8.5 K photoluminescence estimates shown in brackets), as 1.10 eV (1.14) for x = 0.21, and 1.07 eV (1.093) for x = 0.15. Crystal mechanical properties as regards cracks were not as good as for CuInSe2, using similar growth techniques.