66% CW wallplug efficiency from Al-free 0.98 mu m-emitting diode lasers

被引：72

作者：

Botez, D ^{[1
]}

Mawst, LJ ^{[1
]}

Bhattacharya, A ^{[1
]}

Lopez, J ^{[1
]}

Li, J ^{[1
]}

Kuech, TF ^{[1
]}

Iakovlev, VP ^{[1
]}

Suruceanu, GI ^{[1
]}

Caliman, A ^{[1
]}

Syrbu, AV ^{[1
]}

机构：

[1] TECH UNIV MOLDOVA,KISHINEV 277012,MOLDOVA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 21期

关键词：

semiconductor junction lasers; gallium arsenide; gallium indium arsenide;

D O I：

10.1049/el:19961300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.98 mu m-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode lasers have been optimised for maximum wallplug efficiency. Optimised-facet-coated, 100 mu m-widestripe, 500 mu m-long devices having InGaAsP optical-waveguide thicknesses of 0.6 and 1.2 mu m provide maximum wallplug efficiencies of 66% and 62%, respectively. Carbon-doped cap layers allow for a series resistance of 0.08 Ohm for devices with 100 X 500 mu m(2) contact area.

引用

页码：2012 / 2013

页数：2

共 9 条

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