Thin-film ferroelectric microwave devices

被引：214

作者：

Lancaster, MJ ^{[1
]}

Powell, J ^{[1
]}

Porch, A ^{[1
]}

机构：

[1] Univ Birmingham, Sch Elect & Elect Engn, Birmingham B15 2TT, W Midlands, England

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1998年 / 11卷 / 11期

关键词：

D O I：

10.1088/0953-2048/11/11/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials; this includes models of the ferroelectric permittivity and loss tangent, as well as methods of measurement of these properties. New measurements are presented on thin-film strontium titanate and single-crystal strontium barium titanate substrates. These results are compared with the model. A brief discussion is given of the applications of ferroelectric material in microwave devices.

引用

页码：1323 / 1334

页数：12

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