Hydrogen degradation in InP HEMTs

被引：13

作者：

Blanchard, RR ^{[1
]}

del Alamo, JA ^{[1
]}

Chao, PC ^{[1
]}

Adams, SB ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we have investigated the degradation of InP HEMTs due to hydrogen exposure. We show for the first time that there are two independent degradation mechanisms that affect, respectively, the intrinsic and extrinsic portions of the device. Under the gate, H reacts with Ti and creates a TiH compound with a larger lattice that Ti. This induces stress and the resulting piezoelectric effect shifts the threshold voltage, V-T, Of the transistor. This mechanism is found to be largely reversible. In the recessed region next to the gate, hydrogen modifies the surface stoichiometry of the exposed InAlAs. This results in a reduction in the sheet carrier concentration underneath. This mechanism is not reversible.

引用

页码：231 / 234

页数：4

共 13 条

[1] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS [J].